byg24d-m3/hm3, byg24g- m3/hm3, byg24j-m3/hm3 www.vishay.com vishay general semiconductor revision: 23-feb-16 1 document number: 89475 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast avalanche smd rectifier features ? low profile package ? ideal for automated placement ? glass passivated pellet chip junction ? low reverse current ? soft recovery characteristics ? fast reverse recovery time ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? aec-q101 qualified ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive, and telecommunication. mechanical data case: do-214ac (sma) ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade ? base p/nhm3 - halogen-free, rohs-compliant, and aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 2 whisker test, hm3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 1.5 a v rrm 200 v, 400 v, 600 v i fsm 30 a i r 1.0 a v f 1.25 v t rr 140 ns e r 20 mj t j max. 150 c package do-214ac (sma) diode variation single die do-214ac ( s ma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol byg24d byg24g byg24j unit device marking code byg24d byg24g byg24j maximum repetitive peak reverse voltage v rrm 200 400 600 v average forward current at t a = 65 c i f(av) 1.5 a peak forward surge current 10 ms single half ? sine-wave superimposed on rated load i fsm 30 a pulse energy in avalanche mode, non repetitive ? (inductive load switch off) i (br)r = 1 a, t j = 25 c e r 20 mj operating junction and storage temperature range t j , t stg -55 to +150 c
byg24d-m3/hm3, byg24g- m3/hm3, byg24j-m3/hm3 www.vishay.com vishay general semiconductor revision: 23-feb-16 2 document number: 89475 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse test: 300 s pulse width, 1 % duty cycle notes (1) mounted on epoxy-glass hard tissue 35 m x 17 mm 2 cooper area per electrode (2) mounted on epoxy-glass hard tissue 35 m x 50 mm 2 cooper area per electrode note (1) aec-q101 qualified ? ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - max. reverse power dissipation vs. junction temp erature fig. 2 - reverse curren t vs. junction temperature electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol byg24d byg24g byg24j unit minimum breakdown voltage i r = 100 a v br 200 400 600 v maximum instantaneous ? forward voltage i f = 1 a t j = 25 c v f (1) 1.15 v i f = 1.5 a 1.25 maximum reverse current v r = v rrm t j = 25 c i r 1 a t j = 100 c 10 maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, ? i rr = 0.25 a t rr 140 ns thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol byg24d byg24g byg24j unit junction to case r ? jc 25 c/w maximum thermal resistanc e, junction to ambient r ? ja (1) 150 c/w r ? ja (2) 125 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode byg24d-m3/tr 0.064 tr 1800 7" diameter plastic tape and reel byg24d-m3/tr3 0.064 tr3 7500 13" di ameter plastic tape and reel byg24dhm3/tr (1) 0.064 tr 1800 7" diameter plastic tape and reel byg24dhm3/tr3 (1) 0.064 tr3 7500 13" diameter plastic tape and reel 0 10 20 30 40 50 60 25 50 75 100 125 150 re v erse po w er dissipation (m w ) j u nction temperat u re (c) v r = v rrm p r - limit at 100 % v r p r - limit at 8 0 % v r 125 k/ w 155 k/ w 175 k/ w r ja = 1 10 100 25 50 75 100 125 150 re v erse c u rrent ( a) j u nction temperat u re ( c) v r = v rrm
byg24d-m3/hm3, byg24g- m3/hm3, byg24j-m3/hm3 www.vishay.com vishay general semiconductor revision: 23-feb-16 3 document number: 89475 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - forward current vs. forward voltage fig. 4 - average forward current vs. ambient temperature fig. 5 - diode capacitance vs. reverse voltage ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? package outline dimensions in inches (millimeters) 0.01 0.1 1 10 100 0 0.5 1.0 1.5 2.0 2.5 3.0 for w ard v oltage ( v ) for w ard c u rrent (a) t j = 150 c t j = 25 c 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 am b ient temperat u re (c) a v erage for w ard c u rrent (a) 100 8 0 60 40 20 0 120 140 160 v r = v rrm half sine- w a v e r ja = 25 k/ w r ja = 125 k/ w r ja = 150 k/ w 0 5 10 15 20 25 30 0.1 1 10 100 re v erse v oltage ( v ) diode capacitance (pf) f = 1 mhz 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pad layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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